- Nov 10, 2017
We know the next-gen DDR5 memory will be fast. Just how fast it can get will depend on a multitude of factors. Currently, a lot of companies are working on this aspect and yesterday a report emerged from the outlet IT Home that says a Chinese memory firm called 'Netac Technology' is reportedly planning to build DDR5 DRAM modules capable of running at over 10,000MHz. While it isn't confirmed, what the actual news should mean is that Netac's new memory can do more than 10,000MT/s per second.
The company is allegedly using Micron's IFA45 Z9ZSB memory chips starting with 16GB (2Gx8) modules for now. The chips are built on Micron's 1z nm DRAM process node and running 40-40-40 sub-timings. Last year Micron stated that its DDR5 memory can do up to 6,400MT/s and 10,000 is certainly a number much higher than that.
Netac isn't the only company that's been in news recently in relation to making incredible and exciting upcoming DDR5 products. Samsung recently announced that it is building the world's first 512GB DDR5 module, although it wouldn't be as fast as Netac's solution and will top out at 7,200MT/s. The 512GB module is being designed to be used in high-performance enterprise environments like servers and such, but we expect Netac's 10,000MHz kits to be mainly gaming parts.