silversurfer
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- Aug 17, 2014
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Samsung is now mass-producing its 9th-generation triple-level cell (TLC) vertical NAND memory chips for high-performance and high-density solid-state drives. The new chips boast a smaller size and a 50% density improvement over the previous generation NAND memory.
Besides its smaller size, Samsung's new V-NAND memory packs several new technologies. In the official blog post, Samsung says it uses cell interference avoidance and cell life extension to make memory last longer and work more reliably. Also, the company uses "channel hole etching to maximize fabrication productivity:
Samsung Electronics Begins Industry’s First Mass Production of 9th-Gen V-NAND
Industry-leading bit density with about 50% increase compared to previous generation Productivity for the V-NAND’s groundbreaking double-stack structure enhanced through advanced ‘channel hole etching’ technology
news.samsung.com