Intel on Monday detailed its implementation of a backside power delivery network (BS PDN) that will be a part of its Intel 18A and 20A (18/20 angstroms, 1.8/2.0nm-class) fabrication processes. In addition, the company also revealed more information about the benefits this technology provided for its internal Intel 4 + PowerVia node designed specifically to best BS PDN.
Backside Power Delivery
Intel's 18A and 20A manufacturing technologies will introduce two key innovations: RibbonFET gate-all-around field-effect transistors (GAAFETs) and PowerVia backside power delivery network. The advantages of GAA transistors have been discussed previously and are beyond the scope of today's announcement. We'll focus instead on backside power delivery.
