In brief: Samsung provided an update on its process technology migration during its fifth-annual Samsung Foundry Forum digital event. The company is now scheduled to start producing the first 3nm-based chip designs for customers in the first half of 2022. The first 3nm Gate-All-Around (GAA) process node utilizing Multi-Bridge-Channel FET (MBCFET) will allow for up to a 35 percent decrease in area, 30 percent higher performance or 50 percent lower power consumption when compared to 5nm chips.
The company further noted that 3nm’s logic yield is approaching a similar level to that of 4nm, which is already in mass production.
Looking even further out, Samsung
said its second-gen 3nm is now expected in 2023 and that its 2nm process note with MBCFET is currently in the early stages of development with mass production tentatively slated for 2025.
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