Rowhammer Attack Now Works on DDR4 Memory

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Scientists have demonstrated how to use the Rowhammer attack (sometimes spelled Row Hammer) to flip bits in DDR4-based memory chips, a technique that can be used to leak or alter the content of a device's DRAM.

The Rowhammer attack came to light in 2014, after researchers from Carnegie Mellon University proved that sending a barrage of 0s and 1s at a DRAM component, and more specifically at the same memory address, could cause electrical interferences that would affect nearby memory rows.

In March 2015, Google researchers put the attack into an exploit and demonstrated its capabilities. The attack was novel nevertheless, still in its infancy, and it sparked further research on the topic, which was published in late July of the same year by different researchers.

This second study revealed new ways to carry out the attacks via JavaScript, and the scientists discovered that almost all recent DRAM DDR3 chips were vulnerable to their technique.

DDR4 memory chips are also vulnerable
New research published this March by Mark Lanteigne, CTO and Founder, Third I/O Inc., a company that specializes in high-speed bandwidth and supercomputing technologies, has now proven that, by altering the methods used to conduct Rowhammer tests, the attack can also be efficient against newer DDR4 chips.

Full Article. Rowhammer Attack Now Works on DDR4 Memory
 
Weakest point of any security program and hardware attacks is already prominent way back before.
 

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